Toshiba Electronics has developed a series of new high-efficiency N-channel MOSFETs for automotive applicationsbased on the company's advanced U-MOSVIII-H process technology.
The XPN3R804NC and XPN7R104NC both have a nominal voltage of 40V, while theXPN6R706NC and XPN12006NC support 60V operation.
All have extremely low ON resistance values, reaching as low as 3.8mΩ (for the XPN3R804NC version at 10V) and also feature minimal leakage current.
These MOSFETs are housed in surface-mount TSON Advance (WF) packages with minimal board space. They have a footprint of 3.3 × 3.6 mm (typical) and can replace devices with dimensions of 5 × 6 mm.
The inclusion of wet-sided terminals also facilitates board mounting procedures and automated optical inspection (AOI) activities.
Fully compliant with the AEC-Q101 standard, these MOSFETs are designed for installation in automotive environments.
Due to their inherent compactness, they can contribute significantly to a reduction in the size of vehicle electronic control units (ECUs).
Other potential application scenarios where they can be used include switching regulators, DC-DC converters and motor drives.
