Alpha & Omega Semiconductor has announced the release of an 80V power MOSFET that utilises patented Shield Gate technology optimised for higher switching frequencies used in telecommunications and server power to achieve greater efficiency than the previous generation.
The 80 V power MOSFET has lower switching losses in hard switching, topologies and has less overvoltage than the previous generation.
This improvement in performance from light load operation and across the load range results in simpler design choices for high efficiency applications.
The 80V MOSFET family offers the highest levels of power density and energy efficiency, which are essential in solar, power supplies and battery power such as eScooters.
TheAONR66820 and AONS66811 are power MOSFETs in DFN3.3×3.3 and DFN 5×6 packages, respectively,
The AONR66820 is perfectly suited for isolated DC-DC converters used in telecommunications applications.
The AONS66811 is appropriate for synchronous grinding and provides improved reverse charge recovery and overvoltage reduction, which provides greater efficiency and more robustness to the power supply.
The AOTL66810 (80V) has a TOLL package with a footprint approximately 25% smaller than a standard wire TO-263 (D2PAK).
This new device offers a higher power density than existing solutions.
It is also ideal for industrial BLDC motor and battery management applications to reduce the number of MOSFETs in parallel.
Comments
"With thesignificant performance improvement with clip technology in a robust TOLL package, it enables higher current density and greater current capability. The AOTL66810 simplifies new designs to enable overall system cost savings through a reduced number of parallel devices. AOS's TOLL package is best suited for high power applications," said Peter H. Wilson, Director of LV/MV MOSFETs at AOS.