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HomeElectronicsPower Electronics150V power MOSFET improves power supply efficiency

150V power MOSFET improves power efficiency

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Toshiba Electronics Europe has launched a new 150V N-channel power MOSFET that uses the latest U-MOSX-H process to significantly reduce losses.

In addition, voltage spikes between drain and source during switching have been reduced, resulting in improved EMI performance in switching power supplies.

The new device is suitable for a wide range of applications, including switch mode power supplies in industrial equipment, including applications in communications base stations and data centres.

The new MOSFET TPH9R00CQH has a very low drain-source on-resistance (RDS(ON)) of just 9.0mΩ (max. @ VGS=10V).

This represents a reduction of approximately 42% compared to the existing 150V product (TPH1500CNH) based on the latest generation U-MOSVIII-H process.

The main figures of merit (FoM), which include RDS(ON) x QSW and RDS(ON) x QOSS, have been reduced by around 20% and 28% respectively, thus further improving performance.

The charging characteristics have been improved through careful optimisation of the device structure.

With a total gate charge (Qg) of only 44nC and a stored gate charge (QSW) of 11.7nC, the device offers excellent performance, especially in high-speed applications.

The new TPH9R00CQH offers two surface mount (SMD) package options: SOP Advance (5.0 x 6.0 mm) and SOP Advance(N) (4.9 x 6.1 mm), which can be selected to meet the needs of any application.

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